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ZXMS6005DT8 датащи(PDF) 5 Page - Diodes Incorporated |
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ZXMS6005DT8 датащи(HTML) 5 Page - Diodes Incorporated |
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5 / 9 page ![]() ZXMS6005DT8 Document Number DS32248 Rev. 1 - 2 5 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID=10mA Off state Drain Current IDSS 1 µA VDS=12V, VIN=0V Off state Drain Current IDSS 2 uA VDS=36V, VIN=0V Input Threshold Voltage VIN(th) 0.7 1 1.5 V VDS=VGS, ID=1mA Input Current IIN 60 100 μA VIN=+3V Input Current IIN 120 200 μA VIN=+5V Input Current while over temperature active 300 μA VIN=+5V Static Drain-Source On-State Resistance RDS(on) 170 250 m Ω VIN=+3V, ID=1A Static Drain-Source On-State Resistance RDS(on) 150 200 m Ω VIN=+5V, ID=1A Continuous Drain Current (a)(e) ID 1.4 A VIN=3V; TA=25°C Continuous Drain Current (a)(e) ID 1.6 A VIN=5V; TA=25°C Continuous Drain Current (a)(d) ID 1.7 A VIN=3V; TA=25°C Continuous Drain Current (a)(d) ID 1.8 A VIN=5V; TA=25°C Current Limit (g) ID(LIM) 2.2 5 A VIN=+3V, Current Limit (g) ID(LIM) 3.3 7 A VIN=+5V Dynamic Characteristics Turn On Delay Time td(on) 6 μs VDD=12V, ID=1A, VGS=5V Rise time tr 14 μs Turn Off Delay Time td(off) 34 μs Fall Time ff 19 μs Notes: (g) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. |
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