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PBSS302ND датащи(PDF) 4 Page - NXP Semiconductors

номер детали PBSS302ND
подробное описание детали  40 V, 4 A NPN low VCEsat (BISS) transistor
PDF  14 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

PBSS302ND датащи(HTML) 4 Page - NXP Semiconductors

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PBSS302ND_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 18 February 2008
4 of 14
NXP Semiconductors
PBSS302ND
40 V, 4 A NPN low VCEsat (BISS) transistor
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5]
Operated under pulsed conditions: Duty cycle
δ≤ 10 % and pulse width t
p ≤ 10 ms.
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] -
-
350
K/W
[2] -
-
208
K/W
[3] -
-
167
K/W
[4] -
-
113
K/W
[1][5] --50
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
--45
K/W
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa271
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−5
10
10−2
10−4
102
10−1
tp (s)
10−3
103
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0



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