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PBSS302ND датащи(PDF) 3 Page - NXP Semiconductors

номер детали PBSS302ND
подробное описание детали  40 V, 4 A NPN low VCEsat (BISS) transistor
PDF  14 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

PBSS302ND датащи(HTML) 3 Page - NXP Semiconductors

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PBSS302ND_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 18 February 2008
3 of 14
NXP Semiconductors
PBSS302ND
40 V, 4 A NPN low VCEsat (BISS) transistor
[1]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5]
Operated under pulsed conditions: Duty cycle
δ≤ 10 % and pulse width tp ≤ 10 ms.
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1.
Power derating curves
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
(1)
Tamb (°C)
−75
175
125
25
75
−25
006aaa270
800
400
1200
1600
Ptot
(mW)
0
(2)
(4)
(3)



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