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PBSS302ND датащи(PDF) 2 Page - NXP Semiconductors

номер детали PBSS302ND
подробное описание детали  40 V, 4 A NPN low VCEsat (BISS) transistor
PDF  14 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

PBSS302ND датащи(HTML) 2 Page - NXP Semiconductors

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PBSS302ND_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 18 February 2008
2 of 14
NXP Semiconductors
PBSS302ND
40 V, 4 A NPN low VCEsat (BISS) transistor
2.
Pinning information
3.
Ordering information
4.
Marking
5.
Limiting values
Table 2.
Pinning
Pin
Description
Simplified outline
Symbol
1
collector
2
collector
3
base
4
emitter
5
collector
6
collector
13
2
4
5
6
sym014
1, 2, 5, 6
4
3
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS302ND
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
Table 4.
Marking codes
Type number
Marking code
PBSS302ND
C7
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
40
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
[1] -4
A
ICM
peak collector current
single pulse;
tp ≤ 1ms
-15
A
IB
base current
-
0.8
A
IBM
peak base current
single pulse;
tp ≤ 1ms
-2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2] -
360
mW
[3] -
600
mW
[4] -
750
mW
[1] -
1.1
W
[2][5] -
2.5
W



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