IP4085_4385_4386_4387_CX4_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 26 March 2009

4 of 16

NXP Semiconductors

IP4085/4385/4386/4387/CX4

Integrated high-performance ESD-protection diodes

[1]

Device tested with over 1000 pulses of

±30 kV contact discharges, according to the IEC 61000-4-2 model.

[2]

Severe self-heating demands a heat-dissipation optimized PCB to prevent the device from de-soldering. For ambient temperatures

above 50

[3]

Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time.

6.

Thermal characteristics

[1]

Depends on details of layout.

7.

Characteristics

storage temperature

−55

+150

°C

peak reflow temperature

10 s maximum

-

260

°C

ambient temperature

−30

+85

°C

Table 3.

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 4.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to ambient

on a 2-layer PCB

-

IP4085CX4;

IP4385CX4;

IP4386CX4;

IP4387CX4

[1] 130

K/W

Table 5.

Electrical characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

breakdown voltage

IP4085CX4; IP4386CX4

16

-

-

V

IP4385CX4

7.0

-

-

V

IP4387CX4

10

-

-

V

transient clamping voltage

pulse according to IEC 61000-4-5

IP4085CX4

-

-

20.0

V

IP4385CX4

-

-

10.0

V

IP4386CX4

-

-

20.0

V

IP4387CX4

-

-

13.0

V

reverse leakage current

IP4085CX4; IP4385CX4

-

-

200

nA

IP4386CX4

-

-

200

nA

IP4387CX4

-

-

800

nA