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SSM4565M датащи(PDF) 7 Page - Silicon Standard Corp.

номер детали SSM4565M
подробное описание детали  COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  8 Pages
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производитель  SSC [Silicon Standard Corp.]
домашняя страница  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM4565M датащи(HTML) 7 Page - Silicon Standard Corp.

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SSM4565M/GM
12/10/2004 Rev.2.01
P-channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
0.0
10.0
20.0
30.0
40.0
50.0
Q G , Total Gate Charge (nC)
I D =-6A
V DS =-32V
100
1000
10000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse



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