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SSM4565M датащи(PDF) 4 Page - Silicon Standard Corp.

номер детали SSM4565M
подробное описание детали  COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  8 Pages
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производитель  SSC [Silicon Standard Corp.]
домашняя страница  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM4565M датащи(HTML) 4 Page - Silicon Standard Corp.

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SSM4565M/GM
12/10/2004 Rev.2.01
N-channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage vs.
Reverse Diode
Junction Temperature
0
20
40
60
80
100
120
140
012
3456
V DS , Drain-to-Source Voltage (V)
T A = 25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
20
40
60
80
100
120
0123
456
V DS , Drain-to-Source Voltage (V)
T A = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
15
19
23
27
357
9
11
V GS , Gate-to-Source Voltage (V)
I D =5 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =7 A
V G =10V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)



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