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SSM4565M датащи(PDF) 3 Page - Silicon Standard Corp.

номер детали SSM4565M
подробное описание детали  COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  8 Pages
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производитель  SSC [Silicon Standard Corp.]
домашняя страница  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM4565M датащи(HTML) 3 Page - Silicon Standard Corp.

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SSM4565M/GM
12/10/2004 Rev.2.01
P-channel Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
-
V
∆BV
DSS/
∆T j
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=-1mA
-
-0.03
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-6A
-
-
33
m
Ω
VGS=-4.5V, ID=-4A
-
-
42
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
10
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-32V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
nA
Qg
Total Gate Charge
2
ID=-6A
-
20
32
nC
Qgs
Gate-Source Charge
VDS=-32V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
2
VDS=-20V
-
11
-
ns
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω, VGS=-10V
-
67
-
ns
tf
Fall Time
RD=20Ω
-43
-
ns
Ciss
Input Capacitance
VGS=0V
-
1440 2300
pF
Coss
Output Capacitance
VDS=-25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
190
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
2
IS=-6A, VGS=0V
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
23
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 135°C/W when mounted on min. copper pad.
±100



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