P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

08/04/2007 Rev.1.00

www.SiliconStandard.com

1

SSM4409GEM

PRODUCT SUMMARY

Simple Drive Requirement

Low On-resistance

Fast Switching Characteristic

RoHS Compliant

DESCRIPTION

The Advanced Power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications such as

DC/DC converters.

ABSOLUTE MAXIMUM RATINGS

Pb-free; RoHS-compliant

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3a

Max

50

℃/W

Parameter

Total Power Dissipation

2.5

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

Storage Temperature Range

Continuous Drain Current

3a

-12

Pulsed Drain Current

1

-50

0.02

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3a

Rating

-35

±20

-14.5

THERMAL DATA

-35V

7.5mΩ

-14.5A

S

S

S

G

D

D

D

D

SO-8

G

D

S