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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSM4409GEM датащи(PDF) 2 Page - Silicon Standard Corp. |
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SSM4409GEM датащи(HTML) 2 Page - Silicon Standard Corp. |
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2 / 5 page  08/04/2007 Rev.1.00 www.SiliconStandard.com 2 SSM4409GEM Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -35 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-7A - - 7.5 mΩ VGS=-4V, ID=-7A - - 15 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2 V gfs Forward Transconductance VDS=-10V, ID=-7A - 13 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-30V, VGS=0V - - -10 uA Drain-Source Leakage Current (Tj=70 oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=±20V - - ±30 uA Qg Total Gate Charge 2 ID=-14A - 55 90 nC Qgs Gate-Source Charge VDS=-30V - 10 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 30 - nC td(on) Turn-on Delay Time 2 VDS=-15V - 18 - ns tr Rise Time ID=-1A - 10 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 160 - ns tf Fall Time RD=15Ω - 110 - ns Ciss Input Capacitance VGS=0V - 4100 6600 pF Coss Output Capacitance VDS=-25V - 860 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 770 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-14A, VGS=0V - - -1.3 V t rr Reverse Recovery Time 2 IS=-14A, VGS=0V, - 43 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 37 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board （a）, t <10sec (a) 1 in 2 pad of 2 oz copper (b) 125℃ ℃ ℃ ℃/W when mounted on a 0.003 in 2 pad of 2 oz copper ELECTRICAL CHARACTERISTICS @TJ=25 oC (unless otherwise specified ) |
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