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SS8017 датащи(PDF) 3 Page - Silicon Standard Corp. |
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SS8017 датащи(HTML) 3 Page - Silicon Standard Corp. |
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3 / 16 page ![]() www.SiliconStandard.com 3 of 16 SS8017 Absolute Maximum Ratings VCC to GND………….….………………………………………………..……….-0.3V to +6V DXP to GND……….……………………………………………………..……..…-0.3V to VCC + 0.3V DXN to GND………………………………………………….……..……………..-0.3V to +0.8V SMBCLK, SMBDATA, ALERT to GND……………………………………...…-0.3V to +6V SMBDATA, ALERT Current………………………………………………..…….-1mA to +50mA DXN Current………………………………………………..…..………………….±1mA ESD Protection (SMBCLK, SMBDATA, ALERT , human body model).…….2000V ESD Protection (other pins, human body model)……………………………….2000V Continuous Power Dissipation (TA = +70°C) …………………………….SOP (derate 8.30mW/°C above +70°C)………………………………………….......667mW Operating Temperature Range…………………………………………………-20°C to +120°C Junction Temperature………………………………………………….………..+150°C Storage temperature Range…………………………………………………….-65°C to +165°C Lead Temperature (soldering, 10sec)……………………………………..……...+300°C Electrical Characteristics (VCC = + 3.3V, TA = 0°C to +85°C, unless otherwise noted.) PARAMETER CONDITIONS MIN TYP MAX UNITS TR = +60°C to +100°C, VCC = 3.0V to 3.6V -1 +1 Temperature Error, Remote Di- ode (Note 1) TR = 0°C to +125°C (Note 2) -3 +3 °C TA = +60°C to +100°C -3 +3 Temperature Error, Local Diode TA = 0°C to +85°C (Note 2) -5 +5 °C Supply-Voltage Range 3.0 5.5 V Undervoltage Lockout Threshold VCC input, disables A/D conversion, rising edge 2.8 V Undervoltage Lockout Hysteresis 50 mV Power-On Reset Threshold VCC, falling edge 1.7 V POR Threshold Hysteresis 50 mV SMBus static 3 Standby Supply Current Logic inputs forced to VCC or GND Hardware or software standby, SMBCLK at 10kHz 4 µA 0.5 conv/sec 35 Average Operating Supply Current Auto-convert mode. Logic inputs forced to VCC or GND 8.0 conv/sec 320 µA Conversion Time From stop bit to conversion complete (both channels) 125 ms Conversion Rate Timing Conversion-Rate Control Byte=04h, 1Hz 1 sec High level 176 Remote-Diode Source Current DXP forced to 1.5V Low level 11 µA Rev.2.01 6/06/2003 |
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