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NX2139A датащи(PDF) 14 Page - Microsemi Corporation

номер детали NX2139A
подробное описание детали  SINGLE CHANNEL MOBILE PWM AND LDO CONTROLLER
PDF  21 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

NX2139A датащи(HTML) 14 Page - Microsemi Corporation

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NX2139A
14
Rev. 2.3
03/19/09
at 0.75V. The divider consists of two ratioed resistors
so that the output voltage applied at the Fb pin is 0.75V
when the output voltage is at the desired value.
The following equation applies to figure 11, which
shows the relationship between
OUT
V
,
REF
V
and volt-
age divider.
Vout
Vref
Fb
R2
R1
Figure 11 - Voltage Divider
2
REF
1
OUT
REF
RV
R=
V
-V
×
...(18)
where R
2 is part of the compensator, and the value
of R1 value can be set by voltage divider.
Mode Selection
NX2139A can be operated in PFM mode, ultra-
sonic PFM mode, CCM mode and shutdown mode by
applying different voltage on ENSW/MODE pin.
When VCC applied to ENSW /MODE pin,
NX2139A is In PFM mode. The low side MOSFET emu-
lates the function of diode when discontinuous con-
tinuous mode happens, often in light load condition.
During that time, the inductor current crosses the zero
ampere border and becomes negative current. When
the inductor current reaches negative territory, the low
side MOSFET is turned off and it takes longer time for
the output voltage to drop, the high side MOSFET waits
longer to be turned on. At the same time, no matter
light load and heavy load, the on time of high side
MOSFET keeps the same. Therefore the lightier load,
the lower the switching frequency will be. In ultrosonic
PFM mode, the lowest frequency is set to be 25kHz to
avoid audio frequency modulation. This kind of reduc-
tion of frequency keeps the system running at light light
with high efficiency.
In CCM mode, inductor current zero-crossing
sensing is disabled, low side MOSFET keeps on even
when inductor current becomes negative. In this way
the efficiency is lower compared with PFM mode at
light load, but frequency will be kept constant.
Over Current Protection
Over current protection for NX2139A is achieved
by sensing current through the low side MOSFET. An
typical internal current source of 24uA flows through
an external resistor connected from OCSET pin to SW
node sets the over current protection threshold. When
synchronous FET is on, the voltage at node SW is given
as
SW
L
DSON
V
=-IR
×
The voltage at pin OCSET is given as
OCP
OCP
SW
I
R
+V
×
When the voltage is below zero, the over current
occurs as shown in figure below.
OCP
comparator
OCP
24uA
OCP
I
OCP
R
SW
vbus
Figure 12 - Over Voltage Protection
The over current limit can be set by the following
equation.
SET
OCP
OCP
DSON
I
I
R
/R
If the low side MOSFET R
DSON=10mΩ at the OCP
occuring moment, and the current limit is set at 12A,
then
SET
DSON
OCP
OCP
IR
12A 10m
R
5k
I
24uA
×
×Ω
=
=
=Ω
Choose R
OCP=5kΩ



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