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NX2139A датащи(PDF) 14 Page - Microsemi Corporation |
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NX2139A датащи(HTML) 14 Page - Microsemi Corporation |
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14 / 21 page ![]() NX2139A 14 Rev. 2.3 03/19/09 at 0.75V. The divider consists of two ratioed resistors so that the output voltage applied at the Fb pin is 0.75V when the output voltage is at the desired value. The following equation applies to figure 11, which shows the relationship between OUT V , REF V and volt- age divider. Vout Vref Fb R2 R1 Figure 11 - Voltage Divider 2 REF 1 OUT REF RV R= V -V × ...(18) where R 2 is part of the compensator, and the value of R1 value can be set by voltage divider. Mode Selection NX2139A can be operated in PFM mode, ultra- sonic PFM mode, CCM mode and shutdown mode by applying different voltage on ENSW/MODE pin. When VCC applied to ENSW /MODE pin, NX2139A is In PFM mode. The low side MOSFET emu- lates the function of diode when discontinuous con- tinuous mode happens, often in light load condition. During that time, the inductor current crosses the zero ampere border and becomes negative current. When the inductor current reaches negative territory, the low side MOSFET is turned off and it takes longer time for the output voltage to drop, the high side MOSFET waits longer to be turned on. At the same time, no matter light load and heavy load, the on time of high side MOSFET keeps the same. Therefore the lightier load, the lower the switching frequency will be. In ultrosonic PFM mode, the lowest frequency is set to be 25kHz to avoid audio frequency modulation. This kind of reduc- tion of frequency keeps the system running at light light with high efficiency. In CCM mode, inductor current zero-crossing sensing is disabled, low side MOSFET keeps on even when inductor current becomes negative. In this way the efficiency is lower compared with PFM mode at light load, but frequency will be kept constant. Over Current Protection Over current protection for NX2139A is achieved by sensing current through the low side MOSFET. An typical internal current source of 24uA flows through an external resistor connected from OCSET pin to SW node sets the over current protection threshold. When synchronous FET is on, the voltage at node SW is given as SW L DSON V =-IR × The voltage at pin OCSET is given as OCP OCP SW I R +V × When the voltage is below zero, the over current occurs as shown in figure below. OCP comparator OCP 24uA OCP I OCP R SW vbus Figure 12 - Over Voltage Protection The over current limit can be set by the following equation. =× SET OCP OCP DSON I I R /R If the low side MOSFET R DSON=10mΩ at the OCP occuring moment, and the current limit is set at 12A, then SET DSON OCP OCP IR 12A 10m R 5k I 24uA × ×Ω = = =Ω Choose R OCP=5kΩ |
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