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APTM100H45STG датащи(PDF) 2 Page - Microsemi Corporation

номер детали APTM100H45STG
подробное описание детали  Full bridge Series & parallel diodes MOSFET Power Module
PDF  7 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM100H45STG датащи(HTML) 2 Page - Microsemi Corporation

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APTM100H45STG
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS= 1000V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 9A
450
540
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4350
Coss
Output Capacitance
715
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
120
pF
Qg
Total gate Charge
154
Qgs
Gate – Source Charge
26
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 18A
97
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
121
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5Ω
35
ns
Eon
Turn-on Switching Energy
639
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
380
µJ
Eon
Turn-on Switching Energy
1046
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
451
µJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 85°C
30
A
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/µs
Tj = 125°C
150
nC



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