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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM100H45STG датащи(PDF) 1 Page - Microsemi Corporation |
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APTM100H45STG датащи(HTML) 1 Page - Microsemi Corporation |
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1 / 7 page  APTM100H45STG www.microsemi.com 1 – 7 O UT1 OUT2 G1 S1 CR2A Q1 CR1A CR3B CR1B G2 S2 NTC1 CR2B Q2 CR4B 0/VBUS CR4A CR3A G4 G3 S3 S4 Q4 NTC2 Q3 VBUS OUT1 OUT2 NTC1 NTC2 G3 S3 VBUS G1 S1 G4 G2 S2 0/VBUS S4 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1000 V Tc = 25°C 18 ID Continuous Drain Current Tc = 80°C 14 IDM Pulsed Drain current 72 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 540 m Ω PD Maximum Power Dissipation Tc = 25°C 357 W IAR Avalanche current (repetitive and non repetitive) 18 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 2500 mJ VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Full bridge Series & parallel diodes MOSFET Power Module |
Аналогичный номер детали - APTM100H45STG |
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Аналогичное описание - APTM100H45STG |
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