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APTM100H45STG датащи(PDF) 7 Page - Microsemi Corporation

номер детали APTM100H45STG
подробное описание детали  Full bridge Series & parallel diodes MOSFET Power Module
PDF  7 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM100H45STG датащи(HTML) 7 Page - Microsemi Corporation

  APTM100H45STG Datasheet HTML 1Page - Microsemi Corporation APTM100H45STG Datasheet HTML 2Page - Microsemi Corporation APTM100H45STG Datasheet HTML 3Page - Microsemi Corporation APTM100H45STG Datasheet HTML 4Page - Microsemi Corporation APTM100H45STG Datasheet HTML 5Page - Microsemi Corporation APTM100H45STG Datasheet HTML 6Page - Microsemi Corporation APTM100H45STG Datasheet HTML 7Page - Microsemi Corporation  
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APTM100H45STG
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
5
10152025
303540
ID, Drain Current (A)
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
5
10
1520
25303540
ID, Drain Current (A)
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
E
off
0
0.5
1
1.5
2
5
1015202530
35
40
ID, Drain Current (A)
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=667V
ID=18A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
6
8
10
12
14
16
18
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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