NTLJS4149P datasheet(3/5 Pages) ONSEMI

номер детали	NTLJS4149P

подробное описание детали	Power MOSFET

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NTLJS4149P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

0.05

0.03

410

1.4

1.6

1.2

0.8

0.6

10000

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance versus

Gate-to-Source Voltage

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

-ID, DRAIN CURRENT (AMPS)

Figure 5. On-Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain-to-Source Leakage Current

versus Voltage

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

-50

-25

125

100

015

VDS ≥ -10 V

TJ = 25°C

TJ = -55°C

TJ = 100°C

VGS = 0 V

ID = -2.0 A

VGS = -4.5 V

0.2

TJ = 100°C

TJ = 150°C

1.5

TJ = 25°C

VGS = -1.9 V to -7 V

-1.7 V

1000

0.1

150

100000

2.5

-1.5 V

-1.4 V

-1.2 V

TJ = 25°C

ID = -2.0 A

TJ = 25°C

0.04

VGS = -4.5 V

VGS = -2.5 V

0.5

-1.8 V

-1.1 V

0.07

0.06

100

0.15

0.05

789

1.0

-1.6 V

-1.3 V

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