NTLJS4149P datasheet(1/5 Pages) ONSEMI

номер детали	NTLJS4149P

подробное описание детали	Power MOSFET

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производитель	ONSEMI [ON Semiconductor]

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July, 2007 - Rev. 0

1

Publication Order Number:

NTLJS4149P/D

NTLJS4149P

Power MOSFET

-30 V, -5.9 A,

mCoolt Single P-Channel,

2x2 mm, WDFN Package

Features

• WDFN Package with Exposed Drain Pad for Excellent Thermal

Conduction

• 2x2 mm Footprint Same as SC-88 Package

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

• This is a Pb-Free Device

Applications

• Li Ion Battery Linear Mode Charging for Portable Power

Management in Noisy Environment

• DC-DC Conversion Buck/Boost Circuits

• High Side Switching

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

VDSS

-30

V

Gate-to-Source Voltage

VGS

±12

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

-4.5

A

TA = 85°C

-3.3

t

≤ 5 s

TA = 25°C

-5.9

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

1.9

W

t

≤ 5 s

3.2

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

-2.7

A

TA = 85°C

-2.0

Power Dissipation

(Note 2)

TA = 25°C

PD

0.7

W

Pulsed Drain Current

tp = 10 ms

IDM

-18

A

Operating Junction and Storage Temperature

TJ, TSTG

-55 to

150

°C

Source Current (Body Diode) (Note 2)

IS

-1.5

A

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size.

http://onsemi.com

-30 V

75 m

W @ -2.5 V

62 m

W @ -4.5 V

RDS(on) MAX

V(BR)DSS

G

S

P-CHANNEL MOSFET

D

J9

= Specific Device Code

M

= Date Code

G

= Pb-Free Package

J9M

G

1

2

3

6

5

4

WDFN6

CASE 506AP

MARKING

DIAGRAM

Device

Package

Shipping†

ORDERING INFORMATION

NTLJS4149PTAG

WDFN6

(Pb-Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1

2

3

6

5

4

D

G

D

S

(Top View)

PIN CONNECTIONS

D

S

D

Pin 1

(Note: Microdot may be in either location)

NTLJS4149PTBG

WDFN6

(Pb-Free)

3000/Tape & Reel

Аналогичный номер детали - NTLJS4149P

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ON Semiconductor	NTLJS4114N	84Kb / 6P	Power MOSFET 30 V, 7.8 A, uCool Single N?묬hannel, 2x2 mm WDFN Package November, 2006 ??Rev. 1
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	NTLJS4114NT1G	84Kb / 6P	Power MOSFET 30 V, 7.8 A, uCool Single N?묬hannel, 2x2 mm WDFN Package November, 2006 ??Rev. 1
	NTLJS4114NT1G	125Kb / 6P	Power MOSFET November, 2012 ??Rev. 3
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