NTLJS4149P datasheet(2/5 Pages) ONSEMI

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NTLJS4149P

http://onsemi.com

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction-to-Ambient – Steady State (Note 3)

RqJA

°C/W

Junction-to-Ambient – t

≤ 5 s (Note 3)

RqJA

Junction-to-Ambient – Steady State Min Pad (Note 4)

RqJA

180

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size.

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = -250 mA

-30

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = -250 mA, Ref to 25°C

-1.8

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VDS = -24 V, VGS = 0 V

TJ = 25°C

-0.1

-1.0

TJ = 85°C

-1.0

-10

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±12 V

±0.1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250 mA

-0.4

-1.0

Negative Threshold

Temperature Coefficient

VGS(TH)/TJ

3.1

mV/

°C

Drain-to-Source On-Resistance

RDS(on)

VGS = -4.5 V, ID = -2.0 A

VGS = -2.5 V, ID = -2.0 A

VGS = -4.5 V, ID = -4.5 A

Forward Transconductance

gFS

VDS = -6.0 V, ID = -3.0 A

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = -15 V

960

Output Capacitance

COSS

130

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = -4.5 V, VDS = -15 V,

ID = -2.0 A

9.9

Threshold Gate Charge

QG(TH)

0.8

Gate-to-Source Charge

QGS

1.45

Gate-to-Drain Charge

QGD

2.75

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

td(ON)

VGS = -4.5 V, VDS = -15 V,

ID = -2.0 A, RG = 2.0 W

6.9

Rise Time

Turn-Off Delay Time

td(OFF)

Fall Time

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = -1.5 A

TJ = 25°C

-0.75

-1.2

TJ = 85°C

-0.65

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = -1.5 A

Charge Time

Discharge Time

Reverse Recovery Charge

QRR

0.016

5. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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