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ATmega325P датащи(PDF) 299 Page - ATMEL Corporation |
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ATmega325P датащи(HTML) 299 Page - ATMEL Corporation |
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299 / 364 page ![]() 299 8023F–AVR–07/09 ATmega325P/3250P Figure 25-16. State Machine Sequence for Changing/Reading the Data Word 25.8.11 Flash Data Byte Register The Flash Data Byte Register provides an efficient way to load the entire Flash page buffer before executing Page Write, or to read out/verify the content of the Flash. A state machine sets up the control signals to the Flash and senses the strobe signals from the Flash, thus only the data words need to be shifted in/out. The Flash Data Byte Register actually consists of the 8-bit scan chain and a 8-bit temporary reg- ister. During page load, the Update-DR state copies the content of the scan chain over to the temporary register and initiates a write sequence that within 11 TCK cycles loads the content of the temporary register into the Flash page buffer. The AVR automatically alternates between writing the low and the high byte for each new Update-DR state, starting with the low byte for the first Update-DR encountered after entering the PROG_PAGELOAD command. The Program Counter is pre-incremented before writing the low byte, except for the first written byte. This ensures that the first data is written to the address set up by PROG_COMMANDS, and loading the last location in the page buffer does not make the Program Counter increment into the next page. During Page Read, the content of the selected Flash byte is captured into the Flash Data Byte Register during the Capture-DR state. The AVR automatically alternates between reading the low and the high byte for each new Capture-DR state, starting with the low byte for the first Cap- Test-Logic-Reset Run-Test/Idle Shift-DR Exit1-DR Pause-DR Exit2-DR Update-DR Select-IR Scan Capture-IR Shift-IR Exit1-IR Pause-IR Exit2-IR Update-IR Select-DR Scan Capture-DR 0 1 0 11 1 00 00 11 1 0 1 1 0 1 0 0 1 0 1 1 0 1 0 0 0 0 1 1 |
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