AT25DF161 datasheet(51/60 Pages) ATMEL

51 / 60 page

3687C–DFLASH–7/09

AT25DF161 [Preliminary]

Notes: 1. Not 100% tested (value guaranteed by design and characterization).

2. 15 pF load at frequencies above 70 MHz, 30 pF otherwise.

3. Only applicable as a constraint for the Write Status Register Byte 1 command when SPRL = 1.

Note:

1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.

2. Not 100% tested (value guaranteed by design and characterization).

tWPH

(1)(3)

Write Protect Hold Time

100

tSECP(1)

Sector Protect Time (from Chip Select High)

tSECUP

(1)

Sector Unprotect Time (from Chip Select High)

tLOCK(1)

Sector Lockdown and Freeze Sector Lockdown State Time (from Chip Select High)

200

µs

tEDPD(1)

Chip Select High to Deep Power-Down

µs

tRDPD

(1)

Chip Select High to Standby Mode

µs

tRST

Reset Time

µs

15.6 Program and Erase Characteristics

Symbol

Parameter

Min

Typ

Max

Units

tPP(1)

Page Program Time (256 Bytes)

1.0

3.0

tBP

Byte Program Time

7µs

tBLKE(1)

Block Erase Time

4 Kbytes

200

32 Kbytes

250

600

64 Kbytes

400

950

tCHPE(1)(2)

Chip Erase Time

sec

tSUSP

Suspend Time

Program

µs

Erase

tRES

Resume Time

Program

µs

Erase

tOTPP

(1)

OTP Security Register Program Time

200

500

µs

tWRSR(2)

Write Status Register Time

200

15.7 Power-up Conditions

Symbol

Parameter

Min

Max

Units

tVCSL

Minimum VCC to Chip Select Low Time

µs

tPUW

Power-up Device Delay Before Program or Erase Allowed

VPOR

Power-on Reset Voltage

1.5

2.5

15.5 AC Characteristics – All Other Parameters (Continued)

Symbol

Parameter

Min

Max

Units

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