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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AT25DF161 датащи(PDF) 5 Page - ATMEL Corporation |
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AT25DF161 датащи(HTML) 5 Page - ATMEL Corporation |
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5 / 60 page  5 3687C–DFLASH–7/09 AT25DF161 [Preliminary] 3. Block Diagram Figure 3-1. Block Diagram 4. Memory Array To provide the greatest flexibility, the memory array of the AT25DF161 can be erased in four lev- els of granularity including a full chip erase. In addition, the array has been divided into physical sectors of uniform size, of which each sector can be individually protected from program and erase operations. The size of the physical sectors is optimized for both code and data storage applications, allowing both code and data segments to reside in their own isolated regions. The Memory Architecture Diagram illustrates the breakdown of each erase level as well as the breakdown of each physical sector. FLASH MEMORY ARRAY Y-GATING CS SCK SO (SOI) SI (SIO) Y-DECODER X-DECODER I/O BUFFERS AND LATCHES CONTROL AND PROTECTION LOGIC SRAM DATA BUFFER WP INTERFACE CONTROL AND LOGIC HOLD |
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