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EM68932DVKB датащи(PDF) 36 Page - Etron Technology, Inc.

номер детали EM68932DVKB
подробное описание детали  4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
PDF  40 Pages
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производитель  ETRON [Etron Technology, Inc.]
домашняя страница  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM68932DVKB датащи(HTML) 36 Page - Etron Technology, Inc.

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EtronTech
EM68932DVKB
Etron Confidential
36
Rev. 1.0
Aug. 2009
Figure 29. Interrupting Write to Read
Don’t Care
WRITE
NOP
NOP
READ
NOP
NOP
BA, Col b
BA, Col n
DQS
DQ
CK
CK
(1) DI b = Data In to column b. DO n = Data Out from column n.
(2) An interrupted burst of 4 is shown, 2 data elements are written.
3 subsequent elements of Data In are applied in the programmed order following DI b.
(3) tWTR is referenced from the positive clock edge after the last Data In pair.
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
(5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
DI b
DM
tDQSS max
Command
Address
tWTR
CL = 3
NOP
Figure 30. Non Interrupting Write to Precharge
Don’t Care
WRITE
NOP
NOP
NOP
NOP
PRE
BA, Col b
BA a
(or all)
CK
CK
(1) DI b = Data In to column b.
3 subsequent elements of Data In are applied in the programmed order following DI b.
(2) A non-interrupted burst of 4 is shown.
(3) tWR is referenced from the positive clock edge after the last Data in pair.
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
DI b
Command
Address
DQS
DQ
DM
tDQSS max
tWR



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