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EM68932DVKB датащи(PDF) 35 Page - Etron Technology, Inc. |
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EM68932DVKB датащи(HTML) 35 Page - Etron Technology, Inc. |
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35 / 40 page ![]() EtronTech EM68932DVKB Etron Confidential 35 Rev. 1.0 Aug. 2009 Figure 27. Random Write Cycles WRITE WRITE WRITE WRITE WRITE BA, Col b BA, Col x BA, Col n BA, Col a BA, Col g DQS DQ CK CK DI b DI b DI x DI x DM tDQSS max DI a DI a Command Address DI n DI n Don’t Care (1) DI b etc. = Data In to column b, etc. ; b’, etc. = the next Data In following DI b, etc. according to the programmed burst order (2) Programmed burst length = 2, 4, or 8 in cases shown. If burst of 4 or 8 , burst would be truncated. (3) Each WRITE command may be to any active bank and may be to the same or different devices. Figure 28. Non-Interrupting Write to Read Don’t Care WRITE NOP NOP NOP READ NOP BA, Col b BA, Col n DQS DQ CK CK (1) DI b = Data In to column b. 3 subsequent elements of Data In are applied in the programmed order following DI b. (2) A non-interrupted burst of 4 is shown. (3) tWTR is referenced from the positive clock edge after the last Data In pair. (4) A10 is LOW with the WRITE command (Auto Precharge is disabled) (5) The READ and WRITE commands are to the same device but not necessarily to the same bank. DI b DM tDQSS max Command Address tWTR NOP |
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