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EM68932DVKB датащи(PDF) 35 Page - Etron Technology, Inc.

номер детали EM68932DVKB
подробное описание детали  4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
PDF  40 Pages
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производитель  ETRON [Etron Technology, Inc.]
домашняя страница  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM68932DVKB датащи(HTML) 35 Page - Etron Technology, Inc.

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EtronTech
EM68932DVKB
Etron Confidential
35
Rev. 1.0
Aug. 2009
Figure 27. Random Write Cycles
WRITE
WRITE
WRITE
WRITE
WRITE
BA, Col b
BA, Col x
BA, Col n
BA, Col a
BA, Col g
DQS
DQ
CK
CK
DI b
DI b
DI x
DI x
DM
tDQSS max
DI a
DI a
Command
Address
DI n
DI n
Don’t Care
(1) DI b etc. = Data In to column b, etc. ;
b’, etc. = the next Data In following DI b, etc. according to the programmed burst order
(2) Programmed burst length = 2, 4, or 8 in cases shown. If burst of 4 or 8 , burst would be truncated.
(3) Each WRITE command may be to any active bank and may be to the same or different devices.
Figure 28. Non-Interrupting Write to Read
Don’t Care
WRITE
NOP
NOP
NOP
READ
NOP
BA, Col b
BA, Col n
DQS
DQ
CK
CK
(1) DI b = Data In to column b.
3 subsequent elements of Data In are applied in the programmed order following DI b.
(2) A non-interrupted burst of 4 is shown.
(3) tWTR is referenced from the positive clock edge after the last Data In pair.
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
(5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
DI b
DM
tDQSS max
Command
Address
tWTR
NOP



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