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MCP1801 датащи(PDF) 18 Page - Microchip Technology

номер детали MCP1801
подробное описание детали  150 mA, High PSRR, Low Quiescent Current LDO
PDF  26 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1801 датащи(HTML) 18 Page - Microchip Technology

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MCP1801
DS22051C-page 18
© 2009 Microchip Technology Inc.
6.3
Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1
POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R
θ
JA) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application”,
(DS00792),
for
more
information
regarding this subject.
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated in the following table.
Maximum Package Power Dissipation at +25°C
Ambient Temperature
6.4
Voltage Reference
The MCP1801 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1801 LDO. The low cost, low quiescent
current, and small ceramic output capacitor are all
advantages when using the MCP1801 as a voltage
reference.
FIGURE 6-2:
Using the MCP1801 as a
Voltage Reference.
6.5
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 150 mA
maximum specification of the MCP1801. The internal
current limit of the MCP1801 will prevent high peak
load demands from causing non-recoverable damage.
The 150 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
150 mA nor the maximum power dissipation of the
packaged device, pulsed higher load currents can be
applied to the MCP1801
. The typical current limit for
the MCP1801 is 300 mA (TA +25°C).
Package
Package Type:
SOT-23-5
Input Voltage
VIN = 2.4V to 5.0V
LDO Output Voltages and Currents
VOUT =1.8V
IOUT =50 mA
Maximum Ambient Temperature
TA(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) =(VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (5.0V - (0.98 x 1.8V)) x 50 mA
PLDO = 161.8 milli-Watts
TJ(RISE) =PTOTAL x RqJA
TJRISE = 161.8 milli-Watts x 256.0°C/Watt
TJRISE = 41.42°C
TJ =TJRISE + TA(MAX)
TJ = 81.42°C
SOT-23-5 (256°C/Watt = R
θ
JA)
PD(MAX) = (85°C - 25°C) / 256°C/W
PD(MAX) = 234 milli-Watts
PIC®
MCP1801
GND
VIN
CIN
1µF
COUT
1µF
Bridge Sensor
VOUT
VREF
ADO
AD1
Ratio Metric Reference
25 µA Bias
Microcontroller



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