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MCP1801 датащи(PDF) 17 Page - Microchip Technology

номер детали MCP1801
подробное описание детали  150 mA, High PSRR, Low Quiescent Current LDO
PDF  26 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1801 датащи(HTML) 17 Page - Microchip Technology

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© 2009 Microchip Technology Inc.
DS22051C-page 17
MCP1801
6.0
APPLICATION CIRCUITS &
ISSUES
6.1
Typical Application
The MCP1801 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1801 is a
function of input voltage, output voltage, and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(25.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The maximum continuous operating temperature
specified for the MCP1801 is +85°C. To estimate the
internal junction temperature of the MCP1801, the total
internal power dissipation is multiplied by the thermal
resistance from junction to ambient (R
θ
JA). The thermal
resistance from junction to ambient for the SOT-23-5
pin package is estimated at 256°C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type =
SOT-23-5
Input Voltage Range =
2.4V to 5.0V
VIN maximum =
5.0V
VOUT typical =
1.8V
IOUT =50 mA maximum
MCP1801
GND
VOUT
VIN
CIN
1µF
COUT
1 µF Ceramic
VOUT
VIN
2.4V to 5.0V
1.8V
IOUT
50 mA
SHDN
Ceramic
NC
P
LDO
V
IN MAX
)
()
V
OUT MIN
()
() I
OUT MAX
)
()
×
=
Where:
PLDO
=
LDO Pass device internal power
dissipation
VIN(MAX)
=
Maximum input voltage
VOUT(MIN)
=
LDO minimum output voltage
T
JMAX
()
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
Where:
TJ(MAX)
=
Maximum continuous junction
temperature
PTOTAL
=
Total device power dissipation
R
θ
JA
=
Thermal resistance from
junction to ambient
TAMAX
=
Maximum ambient temperature
P
DMAX
()
T
JMAX
()
T
AMAX
()
()
R
θ
JA
---------------------------------------------------
=
Where:
PD(MAX)
=
Maximum device power
dissipation
TJ(MAX)
=
Maximum continuous junction
temperature
TA(MAX)
=
Maximum ambient temperature
R
θ
JA
=
Thermal resistance from
junction to ambient
T
JRISE
()
P
DMAX
()
R
θ
JA
×
=
Where:
TJ(RISE)
=
Rise in device junction
temperature over the ambient
temperature
PTOTAL
=
Maximum device power
dissipation
R
θ
JA
=
Thermal resistance from
junction to ambient
T
J
T
JRISE
()
T
A
+
=
Where:
TJ
=
Junction Temperature
TJ(RISE)
=
Rise in device junction
temperature over the ambient
temperature
TA
=
Ambient temperature



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