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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F103xC датащи(PDF) 85 Page - STMicroelectronics |
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STM32F103xC датащи(HTML) 85 Page - STMicroelectronics |
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85 / 123 page  STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristics Doc ID 14611 Rev 7 85/123 Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 42 and Table 47, respectively. Unless otherwise specified, the parameters given in Table 47 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. Table 47. I/O AC characteristics(1) 1. The I/O speed is configured using the MODEx[1:0] bits. Refer to the STM32F10xxx reference manual for a description of GPIO Port configuration register. MODEx[1:0] bit value(1) Symbol Parameter Conditions Min Max Unit 10 fmax(IO)out Maximum frequency (2) 2. The maximum frequency is defined in Figure 42. CL = 50 pF, VDD = 2 V to 3.6 V 2 MHz tf(IO)out Output high to low level fall time CL = 50 pF, VDD = 2 V to 3.6 V 125(3) 3. Guaranteed by design, not tested in production. ns tr(IO)out Output low to high level rise time 125(3) 01 fmax(IO)out Maximum frequency (2) C L = 50 pF, VDD = 2 V to 3.6 V 10 MHz tf(IO)out Output high to low level fall time CL = 50 pF, VDD = 2 V to 3.6 V 25(3) ns tr(IO)out Output low to high level rise time 25(3) 11 Fmax(IO)out Maximum frequency (2) CL = 30 pF, VDD = 2.7 V to 3.6 V 50 MHz CL = 50 pF, VDD = 2.7 V to 3.6 V 30 MHz CL = 50 pF, VDD = 2 V to 2.7 V 20 MHz tf(IO)out Output high to low level fall time CL = 30 pF, VDD = 2.7 V to 3.6 V 5(3) ns CL = 50 pF, VDD = 2.7 V to 3.6 V 8(3) CL = 50 pF, VDD = 2 V to 2.7 V 12(3) tr(IO)out Output low to high level rise time CL = 30 pF, VDD = 2.7 V to 3.6 V 5(3) CL = 50 pF, VDD = 2.7 V to 3.6 V 8(3) CL = 50 pF, VDD = 2 V to 2.7 V 12(3) -tEXTIpw Pulse width of external signals detected by the EXTI controller 10 ns |
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