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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPS65192 датащи(PDF) 3 Page - Texas Instruments |
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TPS65192 датащи(HTML) 3 Page - Texas Instruments |
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3 / 25 page  ELECTRICAL CHARACTERISTICS TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 VGH1 = VGH2 = 30V; VGL = –7 V; TA = –40°C to 85°C; typical values are at 25°C (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLY IGH1 VGH1 Supply current IN1 to IN7 = GND; VSENSE = 0V 0.35 3 mA IGH2 VGH2 Supply current IN8 and IN9 = GND; VSENSE =0V 0.012 1 mA IGL VGL Supply current IN1 to IN9 = GND; VSENSE = 0V 0.144 4 mA VUVLO Undervoltage lockout threshold VGH1 rising 10.5 13.5 V VHYS Undervoltage lockout hysteresis VGH1 falling 450 mV LEVEL SHIFTERS Continuous; OUT1 to OUT7 ±15 mA Peak; OUT1 to OUT7 ±300 ±650 IOUTX Output current Continuous; OUT8 and OUT9, DISCHARGE ±15 mA Peak; OUT8 an OUT9, DISCHARGE ±150 ±250 IN1 to IN9 = GND ±1 IINX Input current µA IN1 to IN9 = 3.3 V ±1 VIH High level input voltage IN1 to IN9 2.0 V VIL Low level input voltage IN1 to IN9 0.5 V OUT1 to OUT7; ILOAD = 10 mA 0.12 0.4 VDROPH Output voltage drop high V OUT8 and OUT9, DISCHARGE; ILOAD = 10 mA 0.36 1.0 OUT1 to OUT7; ILOAD = –10 mA 0.07 0.3 VDROPL Output voltage drop low V OUT8 and OUT9, DISCHARGE; ILOAD = –10 mA 0.17 1.0 OUT1 to OUT7; CLOAD = 4.7 nF (1) 275 520 tR Rise time ns OUT8 and OUT9; CLOAD = 4.7 nF (1) 761 1000 OUT1 to OUT7; CLOAD = 4.7nF (1) 220 370 tF Fall time ns OUT8 and OUT9; CLOAD = 4.7 nF (1) 526 850 tPH Rising edge, CL = 150 pF 60 Propagation delay ns tPL Falling edge, CL = 150 pF 60 GATE VOLTAGE SHAPING Propagation delay – gate voltage tPH FLK falling 100 ns shaping enabled Time active IN signals must be stable before falling tSU Set-up time 70 ns edge of FLK Resistance between OUT and RE rDS(on) 70 100 Ω pins ILEAK Leakage current from RE pin ±10 µA DISCHARGE VSENSE Discharge voltage sense threshold VSENSE falling 1.275 1.5 1.725 V Discharge voltage sense input ISENSE VSENSE = 2V ±1 µA current VHYS Discharge voltage sense hysteresis VSENSE rising 40 mV (1) Rise and fall times are measured between 10% and 90% of the waveform’s amplitude. Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS65192 |
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