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THS6214IPWPR датащи(PDF) 2 Page - Texas Instruments

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номер детали THS6214IPWPR
подробное описание детали  Dual-Port, Differential, VDSL2 Line Driver Amplifiers
PDF  41 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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THS6214IPWPR датащи(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS
THS6214
SBOS431 – MAY 2009 ....................................................................................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION(1)
SPECIFIED
PACKAGE
TEMPERATURE
PACKAGE
ORDERING
TRANSPORT
PRODUCT
PACKAGE-LEAD(2)
DESIGNATOR
RANGE
MARKING
NUMBER
MEDIA, QUANTITY
THS6214IRHFT
Tape and reel, 250
THS6214
QFN-24
RHF
–40°C to +85°C
6214
THS6214IRHFR
Tape and reel, 3000
THS6214IPWP
Tape and reel, 60
THS6214
TSSOP-24
PWP
–40°C to +85°C
THS6214
THS6214IPWPR
Tape and reel, 2000
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
The PowerPAD™ is electrically isolated from all other pins.
Over operating free-air temperature range, unless otherwise noted.
THS6214
UNIT
Supply voltage, VS– to VS+
28
V
Input voltage, VI
±VS
V
Differential input voltage, VID
±2
V
Output current, IO: Static dc
(2)
±500
mA
Continuous power dissipation
See Dissipation Ratings Table
Under any condition(3)
+150
°C
Continuous operation, long-term reliability(4)
Maximum junction
+130
°C
RHF package only
temperature, TJ
Continuous operation, long-term reliability(4)
+140
°C
PWP package only
Storage temperature range, TSTG
–65 to +150
°C
Human body model (HBM)
2000
V
ESD ratings
Charged device model (CDM)
500
V
Machine model (MM)
100
V
(1)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute
maximum rated conditions for extended periods may degrade device reliability.
(2)
The THS6214 incorporates a PowerPAD on the underside of the chip. This pad acts as a heatsink and must be connected to a
thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature,
which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD
thermally-enhanced package. Under high-frequency ac operation (greater than 10kHz), the short-term output current capability is much
greater than the continuous dc output current rating. This short-term output current rating is about 8.5 times the dc capability, or about
±850mA.
(3)
The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(4)
The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
PACKAGE
θ
JP (°C/W)
θ
JA (°C/W)
(1)
QFN-24 (RHF)
5
30
HTSSOP-24 (PWP)
7
45
(1)
For high power dissipation applications, soldering the PowerPAD to the PCB is required. Failure to do so may result in reduced reliability
and/or lifetime of the device. See TI technical brief SLMA002 for more information about using the PowerPAD thermally enhanced
package.
2
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): THS6214



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