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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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THS6214IPWPR датащи(PDF) 7 Page - Texas Instruments |
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THS6214IPWPR датащи(HTML) 7 Page - Texas Instruments |
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7 / 41 page  ELECTRICAL CHARACTERISTICS: VS = ±6V THS6214 www.ti.com ....................................................................................................................................................................................................... SBOS431 – MAY 2009 At TA = +25°C, GDIFF = +5V/V with RL = 100Ω differential load, RADJ = 0Ω, active impedance circuit configuration, and full bias, unless otherwise noted. Each port is independently tested. THS6214IRHF, IPWP TEST PARAMETER CONDITIONS MIN TYP MAX UNIT LEVEL(1) AC PERFORMANCE GDIFF = +5V/V , RF = 1.5kΩ, VO = 2VPP 140 MHz C Small-signal bandwidth, GDIFF = +10V/V , RF = 1.5kΩ, VO = 2VPP 110 140 MHz B –3dB (VO = 2VPP) TA = –40°C to +85°C 95 MHz B 0.1dB bandwidth flatness GDIFF = +10V/V , RF = 1.24kΩ 100 MHz C Large-signal bandwidth GDIFF = +5V/V , RF = 1.24kΩ, VO = 20VPP 120 MHz C Slew rate (10% to 90% level) GDIFF = +10V/V, VO = 20V step, differential 1200 1600 V/ µs B Over –40°C to +85°C temperature range 1000 V/ µs B Rise and fall time GDIFF = +10V/V, VO = 2VPP 5 ns C GDIFF = +10V/V, VO = 2VPP, f = 1MHz, RL = 100Ω Harmonic distortion C differential 2nd harmonic Full bias –98 -92 dBc B TA = –40°C to +85°C -87 dBc B Low bias –93 dBc C 3rd harmonic Full bias –93 -84 dBc B TA = –40°C to +85°C -79 dBc B Low bias –89 dBc C 2nd harmonic Full bias –80 -75 dBc B TA = –40°C to +85°C -68 dBc B Low bias –74 dBc C 3rd harmonic Full bias –66 -60 dBc B TA = –40°C to +85°C -54 dBc B Low bias –55 dBc C Differential input voltage noise f = 1MHz, input-referred 2.5 3.0 nV/ √Hz B TA = –40°C to +85°C 3.3 nV/ √Hz B Differential noninverting current f = 1MHz 1.2 1.4 pA/ √Hz B noise TA = –40°C to +85°C 1.6 pA/ √Hz B Differential inverting current noise f = 1MHz 17 20 pA/ √Hz B TA = –40°C to +85°C 24 pA/ √Hz B DC PERFORMANCE Open-loop transimpedance gain RL = 100Ω 330 650 k Ω A TA = –40°C to +85°C 300 k Ω B Input offset voltage ±10 ±45 mV A TA = –40°C to +85°C ±55 mV B Input offset voltage drift TA = –40°C to +85°C ±155 µV/°C B Input offset voltage matching Channels 1 to 2 and 3 to 4 only ±0.5 ±5 mV A TA = –40°C to +85°C ±7 mV B ±1 ±3.5 µA A Noninverting input bias current TA = –40°C to +85°C ±5.5 µA B Noninverting input bias current drift TA = –40°C to +85°C ±30 nA/°C B ±8 ±45 µA A Inverting input bias current TA = –40°C to +85°C ±55 µA B Inverting input bias current drift TA = –40°C to +85°C ±135 nA/°C B ±8 ±30 µA A Inverting input bias current matching TA = –40°C to +85°C ±40 µA B (1) Test levels: (A) 100% tested at +25°C. Over-temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s): THS6214 |
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