DMC3028LSD

Document Revision: 4

4 of 11

www.diodes.com

July 2009

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DMC3028LSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

0.5

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

⎯

3.0

V

Static Drain-Source On-Resistance (Note 8)

⎯

⎯

0.028

Ω

0.045

Forward Transconductance (Notes 8 & 9)

⎯

12

⎯

S

Diode Forward Voltage (Note 8)

⎯

0.68

1.2

V

Reverse recovery time (Note 9)

11.5

⎯

ns

Reverse recovery charge (Note 9)

⎯

4.4

⎯

nC

DYNAMIC CHARACTERISTICS (

Input Capacitance

⎯

472

⎯

pF

f= 1MHz

Output Capacitance

⎯

178

⎯

pF

Reverse Transfer Capacitance

⎯

65

⎯

pF

Total Gate Charge

⎯

5.2

⎯

nC

Total Gate Charge

⎯

10.5

⎯

nC

Gate-Source Charge

⎯

1.86

⎯

nC

Gate-Drain Charge

⎯

2.3

⎯

nC

Turn-On Delay Time (Note 10)

⎯

2.5

⎯

ns

Turn-On Rise Time (Note 10)

⎯

3.1

⎯

ns

Turn-Off Delay Time (Note 10)

⎯

14

⎯

ns

Turn-Off Fall Time (Note 10)

⎯

9.7

⎯

ns

Notes:

8. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.