DMC3028LSD

Document Revision: 4

2 of 11

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July 2009

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DMC3028LSD

Characteristic

Symbol

N-Channel - Q1

P-Channel - Q2

Units

Drain-Source Voltage

30

-30

V

Gate-Source Voltage

±20

±20

V

Continuous Drain Current

(Notes 3 & 5)

7.1

-7.4

A

5.7

-5.9

(Notes 2 & 5)

5.5

-5.8

(Notes 2 & 6)

6.6

-6.8

Pulsed Drain Current

(Notes 4 & 5)

34

-36

A

Continuous Source Current (Body diode)

(Notes 3 & 5)

3.5

-3.5

A

Pulsed Source Current (Body diode)

(Notes 4 & 5)

34

-36

A

Characteristic

Symbol

N-Channel - Q1

P-Channel - Q2

Unit

Power Dissipation

Linear Derating Factor

(Notes 2 & 5)

1.3

10

W

mW/

°C

Power Dissipation

Linear Derating Factor

(Notes 2 & 6)

1.8

14

W

mW/

°C

Power Dissipation

Linear Derating Factor

(Notes 3 & 5)

2.1

17

W

mW/

°C

Thermal Resistance, Junction to Ambient

(Notes 2 & 5)

(Notes 2 & 6)

(Notes 3 & 5)

100

70

60

°C/W

Thermal Resistance, Junction to Lead

(Notes 5 & 7)

51

46

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t

≤ 10 sec.

4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).