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DMC3028LSD датащи(PDF) 7 Page - Diodes Incorporated |
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DMC3028LSD датащи(HTML) 7 Page - Diodes Incorporated |
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7 / 11 page ![]() DMC3028LSD Document Revision: 4 7 of 11 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMC3028LSD Electrical Characteristics – Q2 P-Channel @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V ID = -250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS= -30V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 ⎯ -3.0 V ID= -250μA, VDS= VGS Static Drain-Source On-Resistance (Note 8) RDS (ON) ⎯ ⎯ 0.025 Ω VGS= -10V, ID= -7.1A 0.041 VGS= -4.5V, ID= -5.5A Forward Transconductance (Notes 8 & 9) gfs ⎯ 18.6 ⎯ S VDS= -15V, ID= -7.1A Diode Forward Voltage (Note 8) VSD ⎯ -0.80 -1.2 V IS= -1.7A, VGS= 0V Reverse recovery time (Note 9) trr 16.2 ⎯ ns IS= -2.2A, di/dt= 100A/μs Reverse recovery charge (Note 9) Qrr ⎯ 10 ⎯ nC DYNAMIC CHARACTERISTICS ( Note 9) Input Capacitance Ciss ⎯ 1678 ⎯ pF VDS= -15V, VGS= 0V f= 1MHz Output Capacitance Coss ⎯ 303 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 178 ⎯ pF Total Gate Charge Qg ⎯ 16.4 ⎯ nC VDS= -15V, VGS= -4.5V ID= -7.1A Total Gate Charge Qg ⎯ 31.6 ⎯ nC VDS= -15V, VGS= -10V ID= -7.1A Gate-Source Charge Qgs ⎯ 4.3 ⎯ nC Gate-Drain Charge Qgd ⎯ 6.2 ⎯ nC Turn-On Delay Time (Note 10) tD(on) ⎯ 3.5 ⎯ ns VDD= -15V, VGS= -10V ID= -1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 10) tr ⎯ 4.9 ⎯ ns Turn-Off Delay Time (Note 10) tD(off) ⎯ 44 ⎯ ns Turn-Off Fall Time (Note 10) tf ⎯ 28 ⎯ ns Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. |
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