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DMC3028LSD датащи(PDF) 7 Page - Diodes Incorporated

номер детали DMC3028LSD
подробное описание детали  30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET
PDF  11 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC3028LSD датащи(HTML) 7 Page - Diodes Incorporated

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DMC3028LSD
Document Revision: 4
7 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Electrical Characteristics – Q2 P-Channel @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-30
⎯
⎯
V
ID = -250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-0.5
μA
VDS= -30V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
⎯
-3.0
V
ID= -250μA, VDS= VGS
Static Drain-Source On-Resistance (Note 8)
RDS (ON)
⎯
⎯
0.025
Ω
VGS= -10V, ID= -7.1A
0.041
VGS= -4.5V, ID= -5.5A
Forward Transconductance (Notes 8 & 9)
gfs
⎯
18.6
⎯
S
VDS= -15V, ID= -7.1A
Diode Forward Voltage (Note 8)
VSD
⎯
-0.80
-1.2
V
IS= -1.7A, VGS= 0V
Reverse recovery time (Note 9)
trr
16.2
⎯
ns
IS= -2.2A, di/dt= 100A/μs
Reverse recovery charge (Note 9)
Qrr
⎯
10
⎯
nC
DYNAMIC CHARACTERISTICS (
Note 9)
Input Capacitance
Ciss
⎯
1678
⎯
pF
VDS= -15V, VGS= 0V
f= 1MHz
Output Capacitance
Coss
⎯
303
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
178
⎯
pF
Total Gate Charge
Qg
⎯
16.4
⎯
nC
VDS= -15V, VGS= -4.5V
ID= -7.1A
Total Gate Charge
Qg
⎯
31.6
⎯
nC
VDS= -15V, VGS= -10V
ID= -7.1A
Gate-Source Charge
Qgs
⎯
4.3
⎯
nC
Gate-Drain Charge
Qgd
⎯
6.2
⎯
nC
Turn-On Delay Time (Note 10)
tD(on)
⎯
3.5
⎯
ns
VDD= -15V, VGS= -10V
ID= -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 10)
tr
⎯
4.9
⎯
ns
Turn-Off Delay Time (Note 10)
tD(off)
⎯
44
⎯
ns
Turn-Off Fall Time (Note 10)
tf
⎯
28
⎯
ns
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.



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