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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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JS28F640P30T85 датащи(PDF) 39 Page - Numonyx B.V |
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JS28F640P30T85 датащи(HTML) 39 Page - Numonyx B.V |
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39 / 99 page  November 2007 Datasheet Order Number: 306666-11 39 P30 Note: WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR[10]=0, Wait asserted low). 7.5 Program and Erase Characteristics Figure 24: Write-to-Synchronous Read Timing Table 20: Num Symbol Parameter VPPL VPPH Units Notes Min Typ Max Min Typ Max Conventional Word Programming W200 tPROG/W Program Time Single word - 130nm - 90 200 - 85 190 µs 1 Single word - 65nm - 125 150 - 125 150 Single cell - 30 60 - 30 60 Buffered Programming W200 tPROG/W Program Time Single word - 90 200 - 85 190 µs 1 W251 tBUFF 32-word buffer - 440 880 - 340 680 Buffered Enhanced Factory Programming W451 tBEFP/W Program Single word n/a n/a n/a - 10 - µs 1,2 W452 tBEFP/Setup BEFP Setup n/a n/a n/a 5 - - 1 Erasing and Suspending D Q Q W1 R304 R305 R304 R3 W7 W4 R307 R15 R4 W20 W19 W18 W3 W3 R11 R303 R11 W6 W2 R104 R106 R104 R306 W8 W5 R302 R301 R2 CLK Address [A] ADV# CE# [E} WE# [W] OE# [G] WAIT [T] Data [D/Q] RST# [P] |
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