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A4935 датащи(PDF) 18 Page - Allegro MicroSystems |
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A4935 датащи(HTML) 18 Page - Allegro MicroSystems |
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18 / 24 page ![]() Automotive 3-Phase MOSFET Driver A4935 18 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com is set to zero by connecting RDEAD to AGND, the fault blank time typically defaults to 2 μs. Cross-Conduction In some circumstances it is desirable to allow activation of both high-side and low-side FETs in a single phase of the power bridge. This can be used, with care, to reduce diode conduction during synchronous rectification, which improves overall effi- ciency and reduces electromagnetic emissions. This mode of operation is also useful for independently control- ling each phase of a VR motor or to turn on all high-side and low- side FETs together, to cause a supply short circuit for blowing a safety fuse. Cross-conduction can occur only when the internally-generated dead time is set to zero by connecting RDEAD to AGND and, at the same time, CCEN is high. If zero internally-generated dead time is required, but cross-conduction is to be prevented, then CCEN can be tied to AGND. When the dead time is set to zero it is still possible for some overlap to be present at the switching instants due to the relative switching time of the FETs. Bootstrap Capacitor Selection The bootstrap capacitors, CBOOTx, must be correctly selected to ensure proper operation of the A4935. If the capacitances are too high, time will be wasted charging the capacitor, resulting in a limit on the maximum duty cycle and the PWM frequency. If the capacitances are too low, there can be a large voltage drop at the time the charge is transferred from CBOOTx to the FET gate, due to charge sharing. To keep this voltage drop small, the charge in the bootstrap capacitor, QBOOT, should be much larger than the charge required by the gate of the FET, QGATE. A factor of 20 is a reasonable value, and the following formula can be used to calculate the value for CBOOT: QBOOT CBOOT × VBOOT = QGATE × 20 , = therefore: QGATE × 20 , VBOOT CBOOT = (3) where VBOOT is the voltage across the bootstrap capacitor. The voltage drop across the bootstrap capacitor as the FET is being turned on, ∆V, can be approximated by: QGATE . CBOOT ∆V ≈ (4) So, for a factor of 20, ∆V would be approximately 5% of VBOOT. The maximum voltage across the bootstrap capacitor under normal operating conditions is VREG(max). However, in some circumstances the voltage may transiently reach 18 V, the clamp voltage of the Zener diodes between the Cx and Sx pins. In most applications, with a good ceramic capacitor the working voltage can be limited to 16 V. Bootstrap Charging It is good practice to ensure the high-side bootstrap capacitor is completely charged before a high-side PWM cycle is requested. The time required to charge the capacitor, tCHARGE (μs), is approximated by: CBOOT × ∆V , 100 = tCHARGE (5) where CBOOT is the value of the bootstrap capacitor, in nF, and ∆V is the required voltage of the bootstrap capacitor. At power-up and when the drives have been disabled for a long time, the bootstrap capacitor can be completely discharged. In this case ∆V can be considered to be the full high-side drive voltage, 12 V. Otherwise, ∆V is the amount of voltage dropped during the charge transfer, which should be 400 mV or less. The capacitor is charged whenever the Sx pin is pulled low and current flows from VREG through the internal bootstrap diode circuit to CBOOT. Bootstrap Charge Management The A4935 provides automatic bootstrap capacitor charge management. The bootstrap capacitor voltage for each phase is continuously checked to ensure that it is above the bootstrap under-voltage threshold, VBOOTUV. If the bootstrap capacitor volt- age drops below this threshold, the A4935 will turn on the neces- sary low-side FET, and continue charging until the bootstrap capacitor exceeds the undervoltage threshold plus the hysteresis, VBOOTUV + VBOOTUVhys. The minimum charge time is typically 7 μs, but may be longer for very large values of bootstrap capaci- |
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