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AP15G03DF датащи(PDF) 4 Page - A POWER MICROELECTRONICS

номер детали AP15G03DF
подробное описание детали  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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производитель  APME [A POWER MICROELECTRONICS]
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AP15G03DF датащи(HTML) 4 Page - A POWER MICROELECTRONICS

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AP15G03DF
30V N+P-Channel Enhancement Mode MOSFET
AP15G03DF RVE1.0
臺灣永源微電子科技有限公司
N-Typical Characteristics
-
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
VDS , Drain-to-Source Voltage (V)
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
VGS=3V
8.5
14
18
22
2
4
6
8
10
VGS (V)
ID= 15 A
0
2
4
6
8
10
12
0
0.3
0.6
0.9
1.2
VSD , Source-to-Drain Voltage (V)
TJ=150℃
TJ=25℃
0
2 . 5
5
7 . 5
10
0
5
10
15
20
QG , T o t a l G a t e C h a r g e ( n C )
ID= 8 A
VDS=15V
0
0.5
1
1.5
-50
0
50
100
150
TJ ,Junction Temperature ( ℃)
0 . 5
1 . 0
1 . 5
2 . 0
- 5 0
0
50
100
150
TJ , Ju n ct i o n T e m p e r a t u r e (
℃)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.3 Forward Characteristics of Reverse
diode
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ



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