AP15G03DF

30V N+P-Channel Enhancement Mode MOSFET

臺灣永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

32.5

---

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.022

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-15A

---

21

25

mΩ

VGS=-4.5V , ID=-10A

---

33

38

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-2 50uA

-1.0

-1.6

-2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

4.6

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-24V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-24V , VGS=0V , TJ=55℃

---

---

-5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-6A

---

17

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

13

---

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-15V , VGS=-4.5V , ID=-

6A

---

12.6

---

nC

Qgs

Gate-Source Charge

---

4.8

---

Qgd

Gate-Drain Charge

---

4.8

---

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-10V ,

RG=3.3Ω,

ID=-6A

---

4.6

---

ns

Tr

Rise Time

---

14.8

---

Td(off)

Turn-Off Delay Time

---

41

---

Tf

Fall Time

---

19.6

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

1345

---

pF

Coss

Output Capacitance

---

194

---

Crss

Reverse Transfer Capacitance

---

158

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-6.5

A

ISM

Pulsed Source Current2,5

---

---

-26

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1.2

V

trr

Reverse Recovery Time

IF=-6A , dI/dt=100A/µs ,

TJ=25℃

---

16.3

---

nS

Qrr

Reverse Recovery Charge

---

5.9

---

nC

Note :

1、The data tested by surface mo

unted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-10A

4、The power dissipation is limited by 150℃ junction temperature

5 、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

AP15G03DF RVE1.0