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AT25DF512C датащи(PDF) 35 Page - Renesas Technology Corp |
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AT25DF512C датащи(HTML) 35 Page - Renesas Technology Corp |
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35 / 47 page ![]() DS-AT25DF512C-030 Rev.H Page 35 2024-01-08 © 2024 Renesas Electronics AT25DF512C Datasheet 13. Electrical Specifications 13.1 Absolute Maximum Ratings* 13.3 DC Characteristics 1. Max. specification is 20 µA @ 85 °C. 2. Typical values measured at 1.8 V @ 25 °C for the 1.65 V to 3.6 V range. 3. Typical values measured at 3.0 V @ 25 ° C for the 2.3 V to 3.6 V range. Temperature under Bias -55 °C to +125 °C *Notice: Stresses beyond those listed under “Absolute Maximum Ratings” can cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods can affect device reliability. Storage Temperature -65 °C to +150 °C All Output Voltages with Respect to Ground -0.6 V to VCC +0.5 V All Input Voltages (including NC pins) with Respect to Ground -0.6 V to +4.1 V 13.2 DC and AC Operating Range Range Operating Temperature (Case) -10 °C to +85 °C (1.65 V to 3.6 V) -40 °C to +85 °C (1.7 V to 3.6 V) VCC Power Supply 1.65 V to 3.6 V Symbol Parameter Condition 1.65 V to 3.6 V 2.3 V to 3.6 V Units Min Typ Max Min Typ Max IUDPD Ultra-Deep Power- Down Current CS = VCC. All other inputs at 0 V or VCC 0.2 1 0.3 1 µA IDPD 1 Deep Power-Down Current CS = VCC. All other inputs at 0 V or VCC 515 8.5 15 µA ISB Standby Current CS = VCC. All other inputs at 0 V or VCC 25 40 25 40 µA ICC1 2,3 Active Current, Low Power Read (03h, 0Bh) Operation f = 1 MHz; IOUT = 0 mA 4.5 9 5.5 9 mA f = 20 MHz; IOUT = 0 mA 4.5 9 5.5 9 mA ICC2 2,3 Active Current, Read Operation f = 50 MHz; IOUT = 0 mA 5 10 6 10 mA f = 85 MHz; IOUT = 0 mA 5 10 6 10 mA ICC3 2,3 Active Current, Program Operation CS = VCC 12 16 12 16 mA ICC4 2,3 Active Current, Erase Operation CS = VCC 12 18 12 18 mA ILI Input Load Current All inputs at CMOS levels 1 1 µA ILO Output Leakage Current All inputs at CMOS levels 1 1 µA VIL Input Low Voltage VCC x 0.2 VCC x 0.3 V VIH Input High Voltage VCC x 0.8 VCC x 0.7 V VOL Output Low Voltage IOL = 100 µA 0.2 0.4 V VOH Output High Voltage IOH = -100 µA VCC - 0.2 V VCC - 0.2 V V |
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