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AT25DF512C датащи(PDF) 35 Page - Renesas Technology Corp

номер детали AT25DF512C
подробное описание детали  512-Kbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-Read Support
PDF  47 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25DF512C датащи(HTML) 35 Page - Renesas Technology Corp

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DS-AT25DF512C-030 Rev.H
Page 35
2024-01-08
© 2024 Renesas Electronics
AT25DF512C Datasheet
13. Electrical Specifications
13.1 Absolute Maximum Ratings*
13.3 DC Characteristics
1. Max. specification is 20 µA @ 85
°C.
2. Typical values measured at 1.8 V @ 25
°C for the 1.65 V to 3.6 V range.
3. Typical values measured at 3.0 V @ 25
° C for the 2.3 V to 3.6 V range.
Temperature under Bias
-55
°C to +125 °C
*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” can cause permanent damage to the
device. This is a stress rating only, and functional
operation of the device at these or any other conditions
beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods can affect
device reliability.
Storage Temperature
-65
°C to +150 °C
All Output Voltages with Respect to Ground
-0.6 V to VCC +0.5 V
All Input Voltages (including NC pins) with Respect to Ground
-0.6 V to +4.1 V
13.2 DC and AC Operating Range
Range
Operating Temperature (Case)
-10 °C to +85 °C (1.65 V to 3.6 V)
-40
°C to +85 °C (1.7 V to 3.6 V)
VCC Power Supply
1.65 V to 3.6 V
Symbol
Parameter
Condition
1.65 V to 3.6 V
2.3 V to 3.6 V
Units
Min
Typ
Max
Min
Typ
Max
IUDPD
Ultra-Deep Power-
Down Current
CS = VCC. All other inputs
at 0 V or VCC
0.2
1
0.3
1
µA
IDPD 1
Deep Power-Down
Current
CS = VCC. All other inputs
at 0 V or VCC
515
8.5
15
µA
ISB
Standby Current
CS = VCC. All other inputs
at 0 V or VCC
25
40
25
40
µA
ICC1 2,3
Active Current, Low
Power Read (03h,
0Bh) Operation
f = 1 MHz; IOUT = 0 mA
4.5
9
5.5
9
mA
f = 20 MHz; IOUT = 0 mA
4.5
9
5.5
9
mA
ICC2 2,3
Active Current,
Read Operation
f = 50 MHz; IOUT = 0 mA
5
10
6
10
mA
f = 85 MHz; IOUT = 0 mA
5
10
6
10
mA
ICC3 2,3
Active Current,
Program Operation
CS = VCC
12
16
12
16
mA
ICC4 2,3
Active Current,
Erase Operation
CS = VCC
12
18
12
18
mA
ILI
Input Load Current
All inputs at CMOS levels
1
1
µA
ILO
Output Leakage
Current
All inputs at CMOS levels
1
1
µA
VIL
Input Low Voltage
VCC x 0.2
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.8
VCC x 0.7
V
VOL
Output Low Voltage
IOL = 100 µA
0.2
0.4
V
VOH
Output High Voltage IOH = -100 µA
VCC - 0.2 V
VCC - 0.2 V
V



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