4

TUSB212

SLLSEX5A – AUGUST 2017 – REVISED SEPTEMBER 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature and voltage range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply Voltage

Range

VCC

-0.3

3.8

V

Voltage Range

on I/O pins

DxP, DxM, RSTN, EQ, SCL, SDA, DC_BOOST, VREG

-0.3

3.8

V

Tstg

Storage temperature

-65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per

ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

V

Charged device model (CDM), per JEDEC

specification JESD22-C101, all pins(2)

±500

6.3 Recommended Operating Conditions

over operating free-air temperature and voltage range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply Voltage

3

3.3

3.6

V

TA

Ambient temperature

TUSB212

0

70

°C

TUSB212I

-40

85

°C

TJ

Junction temperature

TUSB212

0

85

°C

TUSB212I

-40

105

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TUSB212

UNIT

RWB (VQFN)

12 PINS

RθJA

Junction-to-ambient thermal resistance

137.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

62

°C/W

RθJB

Junction-to-board thermal resistance

67.2

°C/W

ΨJT

Junction-to-top characterization parameter

1.9

°C/W

ΨJB

Junction-to-board characterization parameter

67.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W