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LM35 датащи(PDF) 5 Page - Texas Instruments |
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LM35 датащи(HTML) 5 Page - Texas Instruments |
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5 / 33 page ![]() 6 Specifications 6.1 Absolute Maximum Ratings Over operating free-air temperature range unless otherwise noted(1) MIN MAX UNIT Supply voltage, +VS LM50 (LM50B and LM50C) -0.2 12 V LM50HV -0.2 39.6 Output voltage, VO LM50 (LM50B and LM50C) -1 +VS + 0.6(2) V LM50HV -0.3 +VS + 0.3(2) Output current, IOUT 10 mA Maximum junction temperature, TJ 150 °C Storage temperature, Tstg LM50 (LM50B and LM50C) -65 150 °C LM50HV -65 175 (1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. (2) Maximum voltage must not exceed 12V for LM50 and 39.6V for LM50HV. 6.2 ESD Ratings VALUE UNIT V(ESD), Electrostatic discharge LM50 (LM50B and LM50C) Human-body model (HBM), per JESD22-A114(1) ±2000 V LM50HV ±2500 LM50 (LM50B and LM50C) Charged-device model (CDM), per JEDEC specification JESD22-C101 ±750 V LM50HV ±1000 (1) The human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin. The machine model is a 200pF capacitor discharged directly into each pin. 6.3 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT +VS Supply voltage LM50 (LM50B and LM50C) 4.5 10 V LM50HV 3 36 TMIN,TMAX Specified temperature LM50B Legacy chip -25 100 °C New chip -40 125 LM50C -40 125 LM50HV -40 150 6.4 Thermal Information THERMAL METRIC(1) LM50 LM50HV UNIT DBZ (SOT-23) Legacy chip DBZ (SOT-23) New chip DBZ (SOT-23) 3 PINS 3 PINS 3 PINS RθJA Junction-to-ambient thermal resistance 291.9 240.6 240.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 114.3 144.5 144.5 °C/W RθJB Junction-to-board thermal resistance 62.3 72.3 72.3 °C/W ψJT Junction-to-top characterization parameter 7.4 28.7 28.7 °C/W ψJB Junction-to-board characterization parameter 61 71.7 71.7 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note. www.ti.com LM50, LM50HV SNIS118I – JULY 1999 – REVISED OCTOBER 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 5 Product Folder Links: LM50 LM50HV |
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