Features

•

AEC-Q101 qualified and PPAP capable

•

No reverse recovery charge in application current range

•

Switching behavior independent of temperature

•

High forward surge capability

•

Operating Tj from -55 °C to 175 °C

•

SMD with top side cooling package (HU3PAK)

•

ECOPACK2 compliant component

Applications

•

OBC (On board battery chargers)

•

EV Charging station

Description

The SiC diode STPSC30G065L2Y, housed in HU3PAK, is an ultrahigh performance

power Schottky rectifier. It is manufactured using a silicon carbide substrate. The

wide band-gap material allows the design of a low VF Schottky diode structure with a

650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal capacitive turn-off behavior is

independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge

current capability, making it ideal for use in PFC, where this ST SiC diode boosts the

performance in hard switching conditions. Using the latest design improvement of the

“G” series of ST SiC diodes, as well as implemented tests in production, this diode is

becoming the reference point in the combination of efficiency and application

robustness to the application design.

HU3PAK

A

K

K

A A

A A

A

NC

NC

A

A

A

A

Product label

Product status link

STPSC30G065L2Y

Product summary

IF(AV)

30 A

VRRM

650 V

Tj (max.)

175 °C

VF (typ.)

1.30 V

Automotive 650 V, 30 A high surge silicon carbide power Schottky diode

STPSC30G065L2Y

Datasheet

DS14984 - Rev 1 - June 2025

For further information, contact your local STMicroelectronics sales office.

www.st.com