Features
• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• High forward surge capability
• ECOPACK2 compliant component
• Power efficient product

Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured
using a silicon carbide substrate. The wide band gap material allows the design of a
Schottky diode structure with a 650 V rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost
Product status performance in hard switching conditions.

Applications
• Switch mode power supply
• PFC
• "DC/DC" converters
• LLC topologies
• Boost diode