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PM8805 датащи(PDF) 12 Page - STMicroelectronics

номер детали PM8805
подробное описание детали  IEEE 802.3bt PoE-PD interface with embedded dual active bridge
PDF  45 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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PM8805 датащи(HTML) 12 Page - STMicroelectronics

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Electrical specifications
PM8805
12/45
DS12813 Rev 1
3.3
Thermal data
Table 5. Thermal data
Symbol
Parameter
Max. value
Unit
RTHJA
Thermal resistance junction to ambient(1)
1. Device mounted on a 4" x 4" wide, 4-layer board (2 signal + 2 power), Cu thickness 35 micron, with:
- 4 small exposed pad (EP1-4) copper areas connected to two power planes plus an external layer of
0.12"x0.12" inches minimum size; those areas are connected together with a minimum of 2x3 via holes.
- a large central exposed pad (EP5) and hot swap exposed pad (EP6) copper area connected to two power
planes of 1"x1" inches plus two layers with "minimum pad size shape": those areas are connected with a
minimum of 3 times 2x3 via holes placed close the dissipating zone of the device.
See Section 7 for more details.
30
°C/W
RTHJB
Thermal resistance junction to board(1)
15
°C/W
Pd max
Maximum power dissipation of device(2)
2. Device mounted on the board as described in Note 1 and Tambient = 85°C.
The indicated maximum power dissipation for the device has been calculated as: (TJmax -TAmax) / RTHJA.
The estimated worst case device power dissipation in 4P application is:
Bridge+ HotSwap+ Controller=4 x 0.15
Ω x 1A2 + 0.15Ω x 2 A2 + 0.1W = 1.3W.
1.3
W
TA
Operative ambient temperature range(3)
3. Heat sink is needed in order to not reach device thermal limitation.
-40 to 85
°C



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