| поискавой системы для электроныых деталей |
|
PM8805 датащи(PDF) 9 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
PM8805 датащи(HTML) 9 Page - STMicroelectronics |
|
9 / 45 page ![]() DS12813 Rev 1 9/45 PM8805 Pin description and connection diagram 45 34, 35 GND45 System low potential; it is the return of the second active bridge and it is connected to the Source of the IN45 low-side MOSFET. It must be connected to the system AGND, together with the other bridges' grounds. 42, 43 GND78 System low potential; it is the return of the second active bridge and it is connected to the Source of the IN78 low-side MOSFET. It must be connected to the system AGND, together with the other bridges' grounds. EP1 EP1 Exposed pad Connect the pad to a PCB copper plane to improve heat dissipation; it must be electrically connected to the IN78 signal. Internally the pad is connected with the drains of the lower side MOSFETs used in the 2nd bridge. EP2 EP2 Exposed pad Connect the pad to a PCB copper plane to improve heat dissipation; it must be electrically connected to the IN45 signal. Internally the pad is connected with the drains of the lower side MOSFETs used in the 2nd bridge. EP3 EP3 Exposed pad Connect the pad to a PCB copper plane to improve heat dissipation; it must be electrically connected to the IN36 signal. Internally the pad is connected with the drains of the lower side MOSFETs used in the 1st bridge. EP4 EP4 Exposed pad Connect the pad to a PCB copper plane to improve heat dissipation; it must be electrically connected to the IN12 signal. Internally the pad is connected with the drains of the lower side MOSFETs used in the 1st bridge. EP5 EP5 Main exposed pad Connect this pad to a PCB copper plane to improve heat dissipation; it must be electrically connected to VOB. Internally this pad is connected with the drain of the upper side MOSFETs used in the bridges. EP6 EP6 Exposed pad Connect the pad to a PCB copper plane to improve heat dissipation; it must be electrically connected to the VOB signal. Internally the pad is connected with EP5, the drain of the high-side MOSFET used in the hot swap section. Table 2. Pin description (continued) Pin# Name Function |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |