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OPA2192IDRG4 датащи(PDF) 29 Page - Texas Instruments |
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OPA2192IDRG4 датащи(HTML) 29 Page - Texas Instruments |
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29 / 61 page ![]() Power-Supply ESD Cell 100 Ÿ 100 Ÿ VSS VDD IN ± IN+ + ± R1 RS RF TVS TVS RL VIN +VS ±VS OPA192 ID + ± OPA192, OPA2192, OPA4192 www.ti.com SBOS620E – DECEMBER 2013 – REVISED NOVEMBER 2015 8.3.7 Electrical Overstress Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress (EOS). These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the output pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from accidental ESD events both before and during product assembly. Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is helpful. Figure 65 shows an illustration of the ESD circuits contained in the OPAx192 (indicated by the dashed line area). The ESD protection circuitry involves several current-steering diodes connected from the input and output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device or the power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to remain inactive during normal circuit operation. Figure 65. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 29 Product Folder Links: OPA192 OPA2192 OPA4192 |
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