RGATE

CBOOT

HO

HS

LO

VSS

HB

LM5102

T1

(Optional external

fast recovery diode)

HI

LI

VDD

VIN

VCC

PWM

CONTROLLER

GND

VDD

OUT1

OUT2

0.1 2F

0.47 2F

RT1

RT2

LM5102

www.ti.com

SNVS268B – MAY 2004 – REVISED DECEMBER 2014

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LM5102 is one of the latest generation of high voltage gate drivers which are designed to drive both the

high-side and low-side N-Channel MOSFETs in a half-bridge/full bridge configuration or in a synchronous buck

circuit. The floating high side driver is capable of operating with supply voltages up to 100 V. This allows for N-

Channel MOSFET control in half-bridge, full-bridge, push-pull, two switch forward and active clamp topologies.

In the LM5102 the outputs are independently controlled. The rising edge of each output can be independently

delayed with a programming resistor.

Table 1. LM5102 Highlights

FEATURE

BENEFIT

Allows optimisation of gate drive timings to account for device

Independently programmable high and low side delay

differences between high-side and low-side positions

Low power consumption

Improves light load efficiency figures

Internal bootstrap diode

Reduces parts count and PCB real estate

8.2 Typical Application

Figure 16. LM5102 Driving MOSFETS Connected in Half-Bridge Configuration

Copyright © 2004–2014, Texas Instruments Incorporated

Submit Documentation Feedback

11

Product Folder Links: LM5102