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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L9800 датащи(PDF) 9 Page - STMicroelectronics |
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L9800 датащи(HTML) 9 Page - STMicroelectronics |
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9 / 55 page  Symbol Description Min. Typ. Max. Unit VOUT0D Power transistor drain voltage OUT0 - 1(1) - 42 V VOUT7D Power transistor drain voltage OUT7 - 1(1) - 42 V VDS1 Voltage at power transistor OUT1 -0.3 - VDS(CL) V VDS2 Voltage at power transistor OUT2 -0.3 - VDS(CL) V VOUT12S Power transistor source voltage OUT12 -0.3 - 0.3 V VOUT1D Power transistor drain voltage OUT1 - 1(1) - 42 V VOUT2D Power transistor drain voltage OUT2 - 1(1) - 42 V VDS3 Voltage at power transistor OUT3 -0.3 - VDS(CL) V VDS4 Voltage at power transistor OUT4 -0.3 - VDS(CL) V VOUT34S Power transistor source voltage OUT34 -0.3 - 0.3 V VOUT3D Power transistor drain voltage OUT3 - 1(1) - 42 V VOUT4D Power transistor drain voltage OUT4 - 1(1) - 42 V VDS5 Voltage at power transistor OUT5 -0.3 - VDS(CL) V VDS6 Voltage at power transistor OUT6 -0.3 - VDS(CL) V VOUT56S Power transistor source voltage OUT56 -0.3 - 0.3 V VOUT5D Power transistor drain voltage OUT5 - 1(1) - 42 V VOUT6D Power transistor drain voltage OUT6 - 1(1) - 42 V IDLE pin VIDLE Voltage at IDLE pin -0.3 - 20 V IN0,1 pins VIN0 Voltage at input pins IN0 -0.3 - 20 V VIN1 Voltage at input pins IN1 -0.3 - VDDIO + 0.3 V DIS, NRES pins VDIS Voltage at DIS pin -0.3 - 20 V VRES Voltage at RES pin -0.3 - 20 V SPI pins–SI, NCS, SCLK VSI Voltage at SI pin -0.3 - 20 V VNCS Voltage at NCS pin -0.3 - 20 V VCLK Voltage at CLK pin -0.3 - 20 V VSO Voltage at serial output pin SO -0.3 - VDDIO + 0.3 V 1. Case of short to GND with GND shift or ISOPULSE condition1. Table 5. ESD requirements Item Test condition Min. Max. Unit All pins HBM -2 2 kV All pins CDM (values for corner pins in brackets) -500/(-750) 500/(750) V Pins to connector(1) HBM -4 4 kV 1. All pins are connected to GND. L9800 Product characteristics DS14041 - Rev 2 page 9/55 |
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