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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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INA110 датащи(PDF) 3 Page - Texas Instruments |
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INA110 датащи(HTML) 3 Page - Texas Instruments |
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3 / 22 page  INA110 3 SBOS147A www.ti.com ELECTRICAL CHARACTERISTICS At +25 °C, ±V CC = 15VDC, and RL = 2kΩ, unless otherwise specified. INA110BG, SG INA110KP, KU INA110AG G = 1 + [40k/(R G + 50Ω)] PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS GAIN Range of Gain 1 800 * * * * V/V Gain Equation(1) ** V/V Gain Error, DC: G = 1 0.002 0.04 * 0.02 * * % G = 10 0.01 0.1 0.005 0.05 * * % G = 100 0.02 0.2 0.01 0.1 * * % G = 200 0.04 0.4 0.02 0.2 * * % G = 500 0.1 1 0.05 0.5 * * % Gain Temp. Coefficient: G = 1 ±3 ±20 * ±10 * ppm/ °C G = 10 ±4 ±20 ±2 ±10 * ppm/ °C G = 100 ±6 ±40 ±3 ±20 * ppm/ °C G = 200 ±10 ±60 ±5 ±30 * ppm/ °C G = 500 ±25 ±100 ±10 ±50 * ppm/ °C Nonlinearity, DC: G = 1 ±0.001 ±0.01 ±0.0005 ±0.005 * * % of FS G = 10 ±0.002 ±0.01 ±0.001 ±0.005 * * % of FS G = 100 ±0.004 ±0.02 ±0.002 ±0.01 * * % of FS G = 200 ±0.006 ±0.02 ±0.003 ±0.01 * * % of FS G = 500 ±0.01 ±0.04 ±0.005 ±0.02 * * % of FS OUTPUT Voltage, RL = 2kΩ Over Temperature ±10 ±12.7 * * * * V Current Over Temperature ±5 ±25 ** ** mA Short-Circuit Current ±25 * * mA Capacitive Load Stability 5000 * * pF INPUT OFFSET VOLTAGE(2) Initial Offset: G, P ±(100 + ±(500 + ±(50 + ±(250 + * * µV 1000/G) 5000/G) 600/G) 3000/G) U ±(200 + ±(1000 + µV 2000/G) 5000/G) vs Temperature ±(2 + ±(5 + ±(1 + ±(2 + * µV/°C 20/G) 100/G) 10/G) 50/G) vs Supply VCC = ±6V to ±18V ±(4 + ±(30 + ±(2 + ±(10 + * * µV/V 60/G) 300/G) 30/G) 180/G) BIAS CURRENT Initial Bias Current Each Input 20 100 10 50 * * pA Initial Offset Current 2 50 1 25 * * pA Impedance: Differential 5x1012||6 * * Ω || pF Common-Mode 2x1012||1 * * Ω || pF VOLTAGE RANGE VIN Diff. = 0V(3) Range, Linear Response ±10 ±12 * * V CMR with 1k Ω Source Imbalance: G = 1 DC 70 90 80 100 * * dB G = 10 DC 87 104 96 112 * * dB G = 100 DC 100 110 106 116 * * dB G = 200 DC 100 110 106 116 * * dB G = 500 DC 100 110 106 116 * * dB INPUT NOISE(4) Voltage, fO = 10kHz 10 * * nV/ √Hz fB = 0.1Hz to 10Hz 1 * * µV PP Current, fO = 10kHz 1.8 * * fA/ √Hz OUTPUT NOISE(4) Voltage, fO = 10kHz 65 * * nV/ √Hz fB = 0.1Hz to 10Hz 8 * * µV PP DYNAMIC RESPONSE Small Signal: G = 1 –3dB 2.5 * * MHz G = 10 2.5 * * MHz G = 100 470 * * kHz G = 200 240 * * kHz G = 500 100 * * kHz Full Power VOUT = ±10V, G = 2 to 100 190 270 * * * * kHz Slew Rate G = 2 to 100 12 17 * * * * V/ µs Settling Time: 0.1%, G = 1 VO = 20V Step 4 * * µs G = 10 2 * * µs G = 100 3 * * µs G = 200 5 * * µs G = 500 11 * * µs |
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