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CSD25501F3 датащи(PDF) 1 Page - Texas Instruments

номер детали CSD25501F3
подробное описание детали  CSD25501F3 –20V P-Channel FemtoFET™ MOSFET
PDF  12 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
Logo TI2 - Texas Instruments

CSD25501F3 датащи(HTML) 1 Page - Texas Instruments

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CSD25501F3 –20V P-Channel FemtoFET™ MOSFET
1 Features
• Low on-resistance
• Ultra-low Qg and Qgd
• Ultra-small footprint
– 0.7mm × 0.6mm
• Low profile
– 0.22mm max height
• Integrated ESD protection diode
• Lead and halogen free
• RoHS compliant
2 Applications
• Optimized for load switch applications
• Battery applications
• Handheld and mobile applications
3 Description
This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint
in many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing a substantial
reduction in footprint size. The integrated 10kΩ clamp
resistor (RC) allows the gate voltage (VGS) to be
operated above the maximum internal gate oxide
value of –6V, depending on duty cycle. The gate
leakage (IGSS) through the diode increases as VGS is
increased above –6V.
Product Summary
TA = 25°C
TYPICAL VALUE
UNIT
VDS
Drain-to-Source Voltage
–20
V
Qg
Gate Charge Total (–4.5V)
1.02
nC
Qgd
Gate Charge Gate-to-Drain
0.09
nC
RDS(on)
Drain-to-Source
On-Resistance
VGS = –1.8V
120
mΩ
VGS = –2.5V
86
VGS = –4.5V
64
VGS(th)
Threshold Voltage
–0.75
V
Device Information
DEVICE(1)
QTY
MEDIA
PACKAGE
SHIP
CSD25501F3
3000
7 Inch Reel
Femto
0.73mm × 0.64mm
Land Grid Array (LGA)
Tape
and
Reel
CSD25501F3T
250
(1)
For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C (unless otherwise stated)
VALUE
UNIT
VDS
Drain-to-Source Voltage
–20
V
VGS
Gate-to-Source Voltage
–20
V
ID
Continuous Drain Current(1)
–3.6
A
IDM
Pulsed Drain Current(1) (2)
–13.6
A
PD
Power Dissipation(1)
500
mW
V(ESD)
Human Body Model (HBM)
4000
V
Charged Device Model (CDM)
2000
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150
°C
(1)
Typical RθJA = 255°C/W mounted on FR4 material with
minimum Cu mounting area.
(2)
Pulse duration ≤ 100μs, duty cycle ≤ 1%.
0.7 mm
0.6 mm
0.2 mm
Typical Part Dimensions...............
R
G
D
G
S
R
C
Top View.........
CSD25501F3
SLPS692C – OCTOBER 2017 – REVISED JUNE 2024
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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