4 Specifications

4.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0V, IDS = –250μA

–20

V

IDSS

Drain-to-source leakage current

VGS = 0V, VDS = –16V

–50

nA

IGSS

Gate-to-source leakage current

VDS = 0V, VGS = –6V

–50

nA

VDS = 0V, VGS = –16V

–1

mA

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = –250μA

–0.45

–0.75

–1.05

V

RDS(on)

Drain-to-source on-resistance

VGS = –1.8V, IDS = –0.1A

120

260

mΩ

VGS = –2.5V, IDS = –0.4A

86

125

VGS = –4.5V, IDS = –0.4A

64

76

gfs

Transconductance

VDS = –2V, IDS = –0.4A

3.4

S

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0V, VDS = –10V,

ƒ = 100kHz

295

385

pF

Coss

Output capacitance

70

91

pF

Crss

Reverse transfer capacitance

4.1

5.3

pF

RG

Series gate resistance

33

Ω

RC

Series clamp resistance

10,000

Ω

Qg

Gate charge total (–4.5 V)

VDS = –10V, IDS = –0.4A

1.02

1.33

nC

Qgd

Gate charge gate-to-drain

0.09

nC

Qgs

Gate charge gate-to-source

0.45

nC

Qg(th)

Gate charge at Vth

0.36

nC

Qoss

Output charge

VDS = –10V, VGS = 0V

1.8

nC

td(on)

Turnon delay time

VDS = –10V, VGS = –4.5V,

IDS = –0.4A, RG = 0Ω

474

ns

tr

Rise time

428

ns

td(off)

Turnoff delay time

1154

ns

tf

Fall time

945

ns

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = –0.4A, VGS = 0V

–0.73

–0.95

V

Qrr

Reverse recovery charge

VDS = –10V, IF = –0.4A, di/dt = 200A/μs

3.0

nC

trr

Reverse recovery time

7.4

ns

4.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

90

°C/W

Junction-to-ambient thermal resistance(2)

255

°C/W

(1)

Device mounted on FR4 material with 1in2 (6.45cm2), 2oz (0.071mm) thick Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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CSD25501F3

SLPS692C – OCTOBER 2017 – REVISED JUNE 2024

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