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CSD25501F3 датащи(PDF) 4 Page - Texas Instruments

номер детали CSD25501F3
подробное описание детали  CSD25501F3 –20V P-Channel FemtoFET™ MOSFET
PDF  12 Pages
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домашняя страница  https://www.ti.com
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CSD25501F3 датащи(HTML) 4 Page - Texas Instruments

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4.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 4-1. Transient Thermal Impedance
-VDS - Drain-to-Source Voltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
10
12
D002
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
Figure 4-2. Saturation Characteristics
-VGS - Gate-To-Source Voltage (V)
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
D003
TC = 125° C
TC = 25° C
TC = -55° C
VDS = –5V
Figure 4-3. Transfer Characteristics
Qg - Gate Charge (nC)
0
0.25
0.5
0.75
1
1.25
1.5
0
1
2
3
4
5
6
7
8
9
D004
Measured At External Gate Pin
Charge At Internal Gate Node
ID = –0.4A
VDS = –10V
Figure 4-4. Gate Charge
-VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
1
10
100
1000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
Figure 4-5. Capacitance
CSD25501F3
SLPS692C – OCTOBER 2017 – REVISED JUNE 2024
www.ti.com
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